| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for driving a program of a nonvolatile semiconductor memory system which reduces necessary time for a data program and/or current consumption. <P>SOLUTION: This method is provided with a threshold voltage control step for controlling the threshold voltage of a selected memory cell depending on the voltage level of a selected bit line, a bit line discharging step for discharging the other bit line which has not been selected of a even-number bit line and an odd-number bit line to ground voltage, and a confirmation reading step for reading data in the selected memory cell for confirming the data programmed in the selected memory cell whose threshold voltage is controlled. Between a memory program section and a confirmation reading section, a discharge process of the bit line to which the memory cell to program is connected is eliminated. Thus, a programming speed is improved and current consumption is reduced. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
