发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 <p>On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.</p>
申请公布号 KR20060090212(A) 申请公布日期 2006.08.10
申请号 KR20060068647 申请日期 2006.07.21
申请人 TOKYO ELECTRON LIMITED 发明人 KITANO JUNICHI;MATSUYAMA YUJI;KITANO TAKAHIRO;KATANO TAKAYUKI;MATSUI HIDEFUMI;SUZUKI YO;YAMASHITA MASAMI;AOYAMA TORU;IWAKI HIROYUKI;SHIMURA SATORU;DEGUCHI MASATOSHI;YOSHIHARA KOUSUKE;IIDA NARUAKI
分类号 H01L21/027;H01L21/30;H01L21/00;H01L21/677 主分类号 H01L21/027
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