| 摘要 |
PROBLEM TO BE SOLVED: To improve evenness in the thickness of a film to be deposited on a substrate, when nitride silicon film is deposited by using bis tertial butyl amino silane (BTBAS) and NH<SB>3</SB>as the raw material gases, or when nitride silicon oxide film is formed by using BTBAS, NH<SB>3</SB>and N<SB>2</SB>O as the raw material gases. SOLUTION: When nitride silicon film is deposited on the wafer 16, by making BTBAS and NH<SB>3</SB>flow into the tube 12 accommodated by laminating a plurality of the wafers 16 as the raw material gases with thermal CVD process, or nitride silicon oxide on the wafer 16 by making BTBAS, NH<SB>3</SB>and N<SB>2</SB>O flow into the tube 12 as the raw material gases by thermal CVD process, the value of the ratio b/a of the distance b between the end of a semiconductor wafer 16 and the inner wall of a quartz inner tube 12 to the distance a between the adjacent wafers 16 is made to approximate to 1. COPYRIGHT: (C)2006,JPO&NCIPI
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