| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry-etching method and apparatus thereof wherein any reaction product can be suppressed from depositing in its gas introducing hole. SOLUTION: In the dry-etching method, there is brought into a plasma a gas which is fed to a processing chamber 1 capable of reducing its inside pressure, through a gas dispersing plate 7 formed out of a plate-form body and provided with a plurality of gas introducing holes 8. When performing an etching by the plasma, the flow velocity of the gas is acquired at which the gas passes through the gas introducing holes 8, and the flow velocity is adjusted to a predetermined flow velocity. The flow velocity can be determined by the operation based on the pressure and temperature of the processing chamber 1, the feeding flow rate of the gas, and the opening area of each gas introducing hole 8. Also, the predetermined flow velocity may be the velocity at which such a reaction product as to be produced by the reaction of an etched object disposed in the processing chamber 1 on the plasma can be suppressed from sticking to the inner wall of each gas introducing hole 8. The especially preferred flow velocity is not lower than 80 m/second. COPYRIGHT: (C)2006,JPO&NCIPI
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