| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus of a D-HBT structure in which although a high speed operation is maintained by using an InGaAs excellent in a carrier mobility for a base layer, etc., and a current gain is large, and which can attain increase in the diameter of a substrate. SOLUTION: This semiconductor apparatus includes a base layer 6 composed of the InGaAs in which an In composition has a composition smaller than 53%, and an InGaP having an In composition in which the base layer 6 and the lattice constant become equal. It has an emitter layer 8 and a collector layer 4 which are prepared in the state of sandwiching the base layer 6. COPYRIGHT: (C)2006,JPO&NCIPI
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