| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film capacitor which is low in parasitic resistance of a lower electrode layer. SOLUTION: The thin-film capacitor includes a lower electrode layer 22 formed on a supporting substrate 21, a dielectric layer 23 formed on the lower electrode layer 22, an upper electrode layer 24 formed on the dielectric layer 23, and a lead-out electrode 27b which is connected onto the lower electrode layer 22 and is lower in resistance than the lower electrode layer 22. The lower electrode layer 22 includes a step made thick on the formation area side of the dielectric layer 23 and thin on its outside, and the lead-out electrode 27b is connected in contact with the vertical surface of the step. In this case, a route of current flowing in the high-resistance lower electrode layer 22 can be made shorter than the conventional structure, thus providing the thin-film capacitor that is low in parasitic resistance and superior in electric characteristics as a capacitor. COPYRIGHT: (C)2006,JPO&NCIPI
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