| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with large current and low resistance for improving durability against varying temperatures. <P>SOLUTION: The semiconductor device has a ceramic multilayer wiring board 120, a silicon chip 110 flip-connected with a chip mounting region of the wiring board 120, and external connection bumps 161 and 163 provided on a side, where the silicon chip 110 of the board 120 is mounted. The silicon chip 110 has a front electrode 109 and a rear electrode 117. The ceramic multilayer wiring board 120 has a wiring layer constituted of a conductive material, and the wiring layer constitutes a multilayer wiring layer provided on the surface and on the inside of the board 120. The front electrode 109 of the silicon chip 110 and the external connection bumps 163 and 161 are electrically connected via a multilayer wire in the multilayer wiring layer. The bumps 161 and 163 and the rear electrode 117 are electrically connected on a mounting substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
