| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode (SBD) where a voltage drop in a forward direction is low and breakdown voltage with respect to reverse voltage and electrostatic surge resistance are superior, and to provide the method of manufacturing the diode. SOLUTION: A recess 3 is formed by dry etching. A surface of a lightly doped n-type epitaxial layer 2 comprising the recess 3 is thermally oxidized, and a heavily doped p-type guard ring 7 is formed. Since the heavily doped p-type guard ring 7 is not heated, a damage on the surface of the lightly doped n-type epitaxial layer 2 can be removed without diffusing the heavily doped p-type guard ring 7 for more than required. Consequently, electrostatic surge resistance can be improved without dropping breakdown voltage to reverse voltage of SBD. COPYRIGHT: (C)2006,JPO&NCIPI |
