| 摘要 |
PROBLEM TO BE SOLVED: To generate electrostatic force by using an impurity semiconductor as a functional material. SOLUTION: A method of generating an electrostatic force comprises a first procedure for preparing an impurity semiconductor material, provided with a semiconductor region holding an electric charge moving in the direction of electric field, in response to an electrostatic field exceeding a prescribed threshold, a second procedure for arranging a counter electrode for applying electrostatic field with respect to this semiconductor region, and a third procedure for generating electrostatic power with the electric charge made to existing locally in the semiconductor region, when the prescribed threshold is exceeded by supplying variable voltage to the counter electrode to control the electrostatic field. Electrostatic force, generated according to increasing of the electrostatic field is increased rapidly at the threshold or higher, as compared with the case when electrostatic force is increased gradually accompanying the increase in the electrostatic field, when the threshold is lower. COPYRIGHT: (C)2006,JPO&NCIPI
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