| 摘要 |
The invention relates to a field effect controllable semiconductor component, comprising a semiconductor body with a first terminal zone and a second terminal zone, a channel zone formed between the two terminal zones, a control electrode, and also a plurality of compensation zones. The semiconductor component furthermore has additional doping zones which are arranged in spatial proximity to the compensation zones or in a manner merged therewith. The additional doping zones are connected to the first terminal zone, if appropriate via a series diode.
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