| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for fast operating with low noise by connecting between a plurality of different semiconductor chips in three dimensional manner in a shortest wiring length with the use of a through-electrode. <P>SOLUTION: The method for manufacturing the three dimensional chip lamination structure with an interposer chip 11 for connecting between an upper chip and a lower chip arranged at the midpoint of different upper and lower semiconductor chips 1a to 1f comprises the steps of forming a hole reaching the surface layer electrode by dry etching in the position of a rear surface corresponding to the device side (the surface layer side) external electrode part, providing a metallic plating film on the side wall of the hole and the rear side periphery, deformation-inletting by pressure contact a metallic bump for the another semiconductor chips laminated on the upper stage side in the through-hole with the metallic plating film provided, and electrically connecting the metallic bump in the through hole formed in the semiconductor chip by geometrically caulking the metallic bump. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
