| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride group semiconductor laser element with a high slope efficiency, a high yield, and less variations that emits light in a bluish purple color with a high output. SOLUTION: The gallium nitride group semiconductor laser element is a gallium nitride group semiconductor laser element formed on a gallium nitride substrate, the crystal growth plane of the gallium nitride substrate is selected to be a plane tilted within a range of an absolute value within 0.015 to 0.16°in a <1-100> direction of a (0001) Ga plane, or a plane wherein a root of (A<SP>2</SP>+B<SP>2</SP>) is within a range from 0.10 to 0.17 (wherein A is the off-angle of the (0001) Ga plane in the <1-100> direction, and B is an off-angle of the (0001) Ga plane in a <11-20> direction), and the slope efficiency of the semiconductor laser element is selected to be 0.6 W/A or over. COPYRIGHT: (C)2006,JPO&NCIPI
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