Method of forming a isolation layer in a semiconductor device,申请号KR20040114181-传众专利搜索

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发明名称	Method of forming a isolation layer in a semiconductor device
摘要
申请公布号	KR100611469(B1)	申请公布日期	2006.08.09
申请号	KR20040114181	申请日期	2004.12.28
申请人		发明人
分类号	H01L21/76;H01L21/31	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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