发明名称 PHASE SHIFT MASK ELIMINATING PHASE CONFLICT DEFECT
摘要 A phase shift mask (PSM) is provided. The PSM includes a light-transmitting substrate, a light-blocking region, a first light-transmitting region, and a second light-transmitting region. The light-blocking region is formed in the light-transmitting substrate. The first light-transmitting region is formed as both a first phase shift region for transmitting 0°-phase shifted light and as a first polarization region for TE-polarizing the transmitted light. The second light-transmitting region contacts the first light-transmitting region to form a boundary. The second light-transmitting region is formed in the light-transmitting substrate as a second phase shift region for transmitting 180°-phase shifted light and as a second polarization region for TM-polarizing the transmitted light to prevent a phase conflict at the boundary.
申请公布号 KR20060089550(A) 申请公布日期 2006.08.09
申请号 KR20050011012 申请日期 2005.02.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HUH, SUNG MIN;KIM, HEE BOM;CHOI, SEONG WOON;PARK, JIN HONG
分类号 H01L21/027;G03F1/08 主分类号 H01L21/027
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