Field Effect Transistor device with fin structure and method for manufacturing thereof,申请号KR20040009606-传众专利搜索

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发明名称	Field Effect Transistor device with fin structure and method for manufacturing thereof
摘要
申请公布号	KR100610496(B1)	申请公布日期	2006.08.09
申请号	KR20040009606	申请日期	2004.02.13
申请人		发明人
分类号	H01L29/78;H01L21/336;H01L29/06;H01L29/786	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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