| 发明名称 |
Formation of controlled sublithographic structures |
| 摘要 |
A process for forming sublithographic structures such as fins employs a hardmask protective layer above a hardmask to absorb damage during a dry etching step, thereby preserving symmetry in the hardmask and eliminating a source of defects.
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| 申请公布号 |
US7087532(B2) |
申请公布日期 |
2006.08.08 |
| 申请号 |
US20040711683 |
申请日期 |
2004.09.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DOBUZINSKY DAVID M;BEINTNER JOCHEN C.;PANDA SIDDHARTHA |
| 分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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