发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p>A semiconductor device comprises a first (3A) and a second (3B) wiring on an insulation film (2) formed on the front surface of a semiconductor chip (1), a supporting body (4) having an opening (12) and a third wiring (9) on an additional insulation film (7) on a back surface of the chip. The opening exposes at least part of the second wiring. The third wiring extends along a side surface of the chip and connected to the first wiring. An independent claim is included for the production of the semiconductor device.</p>
申请公布号 KR20060088518(A) 申请公布日期 2006.08.04
申请号 KR20060059179 申请日期 2006.06.29
申请人 SANYO ELECTRIC CO., LTD. 发明人 NOMA TAKASHI;SUZUKI AKIRA;SHINOGI HIROYUKI
分类号 H01L23/12;H01L23/50;H01L21/60;H01L21/768;H01L23/31;H01L23/48;H01L23/485;H01L25/065;H01L27/148 主分类号 H01L23/12
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