发明名称 SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM
摘要 PROBLEM TO BE SOLVED: To obtain a semiconductor memory device capable of performing a read-out operation normally even if an operation frequency of a clock is set in a higher speed without increasing an area and complexing control contents. SOLUTION: A selector circuit 6 outputs one page selection data PSD out of four page selection data PSD (data width one word) based on four kinds of addresses indicated by a burst address BA<1:0> at the time of a normal mode, and outputs one page selection data PSD out of eight page selection data PSD (data width one byte) based on eight kinds of addresses indicated by a burst address BA<1:-1> at the time of a byte mode, An output buffer (part) 7 buffers the page selection data PSD, and outputs outside data DO in which effective bits based on the page selection data PSD is sixteen bits or eight bits under control of a byte signal BYTE. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006202444(A) 申请公布日期 2006.08.03
申请号 JP20050015052 申请日期 2005.01.24
申请人 RENESAS TECHNOLOGY CORP 发明人 KUBO TAKASHI
分类号 G11C11/407;G11C11/409 主分类号 G11C11/407
代理机构 代理人
主权项
地址