发明名称 |
LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT |
摘要 |
A second electrode (16) formed on a second main surface of a compound semiconductor layer (100) of a light emitting element (1) is arranged in contact with the second main surface of the compound semiconductor layer (100) and has a junction alloying layer (31) for reducing the resistance due to the junction with said compound semiconductor layer (100) and a solder layer (34) for connecting said junction metal layer to an electroconductive support (52). In the solder layer (34), there are formed an Sn-based solder layer (34s) which is arranged on the junction alloying layer (31) side and comprises an Sn-based metal containing Sn as a main component and having a melting point lower than that of the junction alloying layer (31) and an Au-Sn based solder layer (34m) which is arranged on the side opposite to the junction alloying layer (31) with respect to said Sn-based solder layer (34s) and in contact therewith and contains 30 to 90 mass % of Au and 10 to 70 mass % of Sn and has a total content of Au and Sn of 80 mass % or more and has a melting point higher than that of the Sn-based solder layer (34s). The above structure of an element is excellent in the reliability of the junction between an Au-Sn based solder layer and a junction alloying layer, which results in making the Au-Sn based solder layer less prone to exfoliation, in the case of a light-emitting element which adopts the mounting using an Au-Sn based solder layer. |
申请公布号 |
WO2006080408(A1) |
申请公布日期 |
2006.08.03 |
申请号 |
WO2006JP301250 |
申请日期 |
2006.01.26 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD.;IKEDA, HITOSHI;OBARA, MASAYOSHI |
发明人 |
IKEDA, HITOSHI;OBARA, MASAYOSHI |
分类号 |
H01L33/38;B23K35/26;H01L21/28;H01L21/52;H01L33/00;H01L33/30;H01L33/40;H01L33/56;H01L33/62 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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