发明名称 |
MAGNETOELECTRONIC DEVICES UTILIZING PROTECTIVE CAPPING LAYERS AND METHODS OF FABRICATING THE SAME |
摘要 |
Magnetoelectronic device structures and methods for fabricating the same are provided. One method comprises forming a first and a second conductor. The first conductor is electrically coupled to an interconnect stack. A first insulating layer is deposited overlying the first conductor and the second conductor. A via is etched to substantially expose the first conductor. A protective capping layer is deposited by electroless deposition within the via and is electrically coupled to the first conductor. A magnetic memory element layer is formed within the via and overlying the second insulating layer and the second conductor.
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申请公布号 |
US2006170068(A1) |
申请公布日期 |
2006.08.03 |
申请号 |
US20050048015 |
申请日期 |
2005.01.31 |
申请人 |
REN J J;BUTCHER BRIAN R;DURLAM MARK A;GRYNKEWICH GREGORY W |
发明人 |
REN J. J.;BUTCHER BRIAN R.;DURLAM MARK A.;GRYNKEWICH GREGORY W. |
分类号 |
H01L43/00;H01L29/82 |
主分类号 |
H01L43/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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