Semiconductor product e.g. dynamic RAM, for storing information, has substrate comprising isolation layer, and dopant diffusion region connected with capacitor electrode that is connected with one source and drain region

摘要

The product has a semiconductor substrate and a test structure with a transistor comprising two source and drain regions. The substrate comprises an isolation layer (13) that separates a gate electrode from the substrate. A dopant diffusion region (15) is arranged in the substrate and a capacitor electrode is connected with one of the source and drain regions. The dopant diffusion region is connected with the capacitor electrode. An independent claim is also included for a method of electrical measuring of a test structure of a semiconductor product.