| 摘要 |
PROBLEM TO BE SOLVED: To provide a new workpiece edge polishing method which solves problems occurring in a conventional method based on an adsorbing table, and achieves all of complete removal of loose abrasive grain, drastic power saving by realization of simultaneous buffing of both surfaces of an edge and end faces of a workpiece, and complete removal of the loose abrasive grain after completion of the buffing, and to provide a workpiece edge polishing device. SOLUTION: According to the workpiece edge polishing method, the workpiece 1 such as a semiconductor wafer represented by a silicon wafer, is erectly held, preferably in the range of 60 to 90 degrees with respect to the horizontal plane, and most preferably at 90 degrees, and driven for rotation by means of at least three rotary bodies 20 (20A, 20B, 20C). Then a buff 10 is arranged at an undermost location of the workpiece 1, and the loose abrasive grain 6 (slurry) is ejected to a polishing section 1b from below to carry out buffing. Further the workpiece edge polishing device for use in the method is comprised of a buff pressing device 18 for pressing the buff on both sides in a thickness direction. COPYRIGHT: (C)2006,JPO&NCIPI |
