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发明名称
Transistor und Verfahren zu seiner Herstellung bzw. Hestellung einer Halbleitervorrichtung
摘要
申请公布号
DE10012897(B4)
申请公布日期
2006.08.03
申请号
DE20001012897
申请日期
2000.03.16
申请人
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.
发明人
PARK, BYUNG GOOK;KIM, DAE HWAN
分类号
H01L21/335;H01L29/78;H01L21/28;H01L21/336;H01L27/115;H01L29/423
主分类号
H01L21/335
代理机构
代理人
主权项
地址
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