| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a semiconductor storage device capable of preventing increase of capacitor leak current by reducing a plasma damage added to a capacity insulation film in the case of forming a contact plug or forming a wiring layer after forming a capacitor so as to suppress deterioration of the capacity insulation film, and to provide a manufacturing method of the device. <P>SOLUTION: At a second interlayer insulation film 109 formed on a first interlayer insulation film 106 on a semiconductor substrate 100, recesses 110 as capacitor areas are formed. In each recess 110, a lower electrode (a second polysilicon film 412 and an HSG film 413) is formed. On the lower electrode, a tantalum oxide film 115 as a capacitor insulation film, and a first titanium nitride film as an upper electrode are formed. A plate contact 120 connected with each of the upper electrode and an upper layer wiring 124 is connected electrically with an n-type impurity diffusion layer 105 on the surface part of the semiconductor substrate 100 through a plus 107C in the first interlayer insulation film 106. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
