发明名称 FILM BULK ACOUSTIC RESONATOR AND THE METHOD THEREOF
摘要 A film bulk acoustic resonator (FBAR) including a substrate (110) having an etched air gap (111) therethrough; a resonance part (141) having a first electrode (141), a piezoelectric film (143) and a second electrode (145) which are laminated in turn above the air gap; and an etching resistance layer disposed between the air gap and the resonance part to limit an etching depth in forming the air gap, thereby preventing damage to the resonance part (140).
申请公布号 KR20060087848(A) 申请公布日期 2006.08.03
申请号 KR20050008706 申请日期 2005.01.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG, SEOG WOO;CHOI, HYUNG;SONG, IN SANG;HA, BYEOUNG JU
分类号 H03H9/15;H01L41/09;H01L41/18;H01L41/22;H01L41/29;H03H3/007;H03H3/02;H03H9/17 主分类号 H03H9/15
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