发明名称 256 MEG DYNAMIC RANDOM ACCESS MEMORY
摘要 PROBLEM TO BE SOLVED: To reduce a load with respect to the boost power source of an output buffer. SOLUTION: A method for controlling the charging of a boot capacitor in the output buffer of a memory device includes a step of charging the boot capacitor from a voltage power source to a predetermined voltage, a step of holding the boot capacitor at a predetermined voltage, a step of supplying the charges of the boot capacitor to a pull-up transistor when the pull-up transistor is conductive, a step of disconnecting the boot capacitor and the voltage source from each other when the pull-up transistor is conductive, a step of monitoring the disconnecting step, and a step of unbooting the boot capacitor after the boot capacitor is disconnected from the voltage source. The monitoring step includes a step of sensing the holding transistor used for connecting the boot capacitor to a predetermined voltage. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006202483(A) 申请公布日期 2006.08.03
申请号 JP20060065136 申请日期 2006.03.10
申请人 MICRON TECHNOLOGY INC 发明人 KEETH BRENT;BUNKER LAYNE G;DERNER SCOTT J;TAYLOR RONALD L;MULLIN JOHN S;BEFFA RAYMOND J;ROSS FRANK F;KINSMAN LARRY D
分类号 G11C11/401;G11C11/409;G11C5/02;G11C5/06;G11C11/407;G11C11/4074;G11C11/4076;G11C11/4097;G11C29/04;G11C29/14;H01L21/8242;H01L27/108 主分类号 G11C11/401
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