发明名称 |
METHOD FOR EVALUATING CONCENTRATION OF SEMICONDUCTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To know the effective concentration of a p-layer and an n-lyer of a striped parallel pn layer provided in a vertical super junction semiconductor element. SOLUTION: An evaluation element 5 is produced by thinning the width of an element in the direction parallel to the stripes to the same extent as the thickness of a vertical super junction semiconductor element. With the side in the thickness direction of the evaluation element 5 down, the evaluation element 5 is obliquely polished so as to enlarge the width of the parallel pn layer 2 of the evaluation element 5. The spread resistance measuring device is used to a polishing face 4 exposed by oblique polishing to perform concentration evaluation. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006203151(A) |
申请公布日期 |
2006.08.03 |
申请号 |
JP20050060949 |
申请日期 |
2005.03.04 |
申请人 |
FUJI ELECTRIC HOLDINGS CO LTD |
发明人 |
SOMA YASUHISA;IWAMOTO SUSUMU |
分类号 |
H01L21/336;H01L29/78;H01L29/861 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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