发明名称 METHOD FOR EVALUATING CONCENTRATION OF SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To know the effective concentration of a p-layer and an n-lyer of a striped parallel pn layer provided in a vertical super junction semiconductor element. SOLUTION: An evaluation element 5 is produced by thinning the width of an element in the direction parallel to the stripes to the same extent as the thickness of a vertical super junction semiconductor element. With the side in the thickness direction of the evaluation element 5 down, the evaluation element 5 is obliquely polished so as to enlarge the width of the parallel pn layer 2 of the evaluation element 5. The spread resistance measuring device is used to a polishing face 4 exposed by oblique polishing to perform concentration evaluation. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006203151(A) 申请公布日期 2006.08.03
申请号 JP20050060949 申请日期 2005.03.04
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 SOMA YASUHISA;IWAMOTO SUSUMU
分类号 H01L21/336;H01L29/78;H01L29/861 主分类号 H01L21/336
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