| 摘要 |
In a process for producing a semiconductor chip, a functional semiconductor layer sequence ( 2 ) is grown epitaxially on a growth substrate ( 1 ). Then, a separating zone ( 4 ), which lies parallel to a main surface ( 8 ) of the growth substrate ( 1 ), is formed in the growth substrate ( 1 ) by ion implantation, the ion implantation taking place through the functional semiconductor layer sequence ( 2 ). Then, a handle substrate ( 6 ) is applied to the functional semiconductor layer sequence ( 2 ), and a part of the growth substrate ( 1 ) which is remote from the handle substrate ( 6 ) as seen from the separating zone ( 4 ), is detached along the separating zone ( 4 ).
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