发明名称 METHOD FOR FORMING LOCAL CONNECTION/CONDUCTIVE LINE AND STRUCTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a new semiconductor integrated circuit and a method for manufacturing the new semiconductor integrated circuit for a semiconductor integrated circuit including local connection and a manufacturing method of the semiconductor integrated circuit including a local connection method. SOLUTION: Conductive lines 22, 24, 26 having opposing sidewalls are formed on a semiconductor substrate. An insulating layer 34 is deposited, and is etched along at least one portion of at least one sidewall of a line. Insulating spacers 47, 48, 49, 50, 52 are formed. The local connection layer 56 is formed so that they lie on at least one portion of the conductive line, and substrate material positions 42, 43, 44 are connected electrically. The injection of a shallow conductive reinforcement impurity and that of a deep one are made into the local connection layer. The conductive reinforcement impurities are diffused from the local connection layer to the lower semiconductor substrate material. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006203231(A) 申请公布日期 2006.08.03
申请号 JP20060053994 申请日期 2006.02.28
申请人 MICRON TECHNOLOGY INC 发明人 MANNING H MONTGOMERY
分类号 H01L21/768;H01L21/265;H01L21/3205;H01L21/76;H01L21/8234;H01L23/485;H01L23/52;H01L27/088 主分类号 H01L21/768
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