发明名称 EXPOSURE ADJUSTMENT METHOD IN CHARGED PARTICLE BEAM EXPOSURE APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an exposure adjustment method capable of simply compensating a change in a position, a shape, and a focal position of an image on a wafer. SOLUTION: The charged particle beam exposure apparatus adopts the split exposure transfer system for using charged particle beams to expose and transfer a pattern formed on a reticle onto a sensitive substrate such as a wafer; stores a correction amount applied to a projection optical system to compensate the change in the position, shape, and focal position of the image on the wafer caused by a flection of the reticle, in an optical axis direction of an exposed position in a form of a table as data unique to each position on the face of the reticle; and adjusts the projection optical system at exposing and transferring depending on the exposed position of the reticle on the basis of the corresponding correction amount in the table. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006203067(A) 申请公布日期 2006.08.03
申请号 JP20050014532 申请日期 2005.01.21
申请人 NIKON CORP 发明人 YAMADA ATSUSHI
分类号 H01L21/027;G03F7/20;H01J37/305 主分类号 H01L21/027
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