| 摘要 |
PROBLEM TO BE SOLVED: To provide a normally-on type semiconductor device having high withstand voltage and low on-resistance. SOLUTION: A distance x (x>0) is provided between an end of a gate electrode 9 on the side of a drain layer 6 and a joint surface between a channel region 7 and the drain layer 6. In the channel region 7, a portion just under the gate electrode 9 functions as a channel, and a right side region functions as an extension region of the drain layer 6. COPYRIGHT: (C)2006,JPO&NCIPI
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