Method for fabricating silicide of semiconductor device,申请号KR20030101071-传众专利搜索

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发明名称	Method for fabricating silicide of semiconductor device
摘要
申请公布号	KR100607798(B1)	申请公布日期	2006.08.02
申请号	KR20030101071	申请日期	2003.12.31
申请人		发明人
分类号	H01L21/24;H01L21/28;H01L21/336;H01L21/8234	主分类号	H01L21/24
代理机构		代理人
主权项
地址

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