| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor element operable even when displacement or micro-pipe or the like is contained. SOLUTION: At the time of forming an epitaxial layer 12 on a silicon carbide substrate 11, a growth condition is selected so that the upper part of a micro- pipe 18 existing in the silicon carbide substrate 11 can be filled. There is a case that the micro-pipe 18 is not filled in the silicon carbide substrate 11, and that a failure 19 succeeding the micro-pipe 18 is grown in the epitaxial layer 12 in accordance with the shape of the micro-pipe 18 or the selected growth condition. In that case, the failure 19 is buried in the middle of the growth so as not to be grown to the upper face of the epitaxial layer 12. Then, a shot key electrode 14 and an upper electrode 16 are formed on the epitaxial layer 12, and an ohmic electrode 15 and a lower electrode 17 are formed under the silicon carbide substrate 11. COPYRIGHT: (C)2004,JPO |
