发明名称 |
Silica glass member for semiconductor and production method thereof |
摘要 |
A silica glass member for semiconductor in which each concentration of Fe, Cu, Cr and Ni is 5 ppb or less and the concentration of an OH group is 30 ppm or less and which has a viscosity of 10<SUP>13.0 </SUP>poise or more at 1200° C. is provided as a silica glass member for semiconductor having high heat-resistance and higher purity.
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申请公布号 |
US7082789(B2) |
申请公布日期 |
2006.08.01 |
申请号 |
US20020300739 |
申请日期 |
2002.11.21 |
申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
EZAKI MASANOBU;PAN LIAN-SHENG;TANIIKE SEIJI |
分类号 |
C03B20/00;C03B8/04;C03C3/06;C03C15/00;C30B35/00 |
主分类号 |
C03B20/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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