发明名称 Silica glass member for semiconductor and production method thereof
摘要 A silica glass member for semiconductor in which each concentration of Fe, Cu, Cr and Ni is 5 ppb or less and the concentration of an OH group is 30 ppm or less and which has a viscosity of 10<SUP>13.0 </SUP>poise or more at 1200° C. is provided as a silica glass member for semiconductor having high heat-resistance and higher purity.
申请公布号 US7082789(B2) 申请公布日期 2006.08.01
申请号 US20020300739 申请日期 2002.11.21
申请人 TOSHIBA CERAMICS CO., LTD. 发明人 EZAKI MASANOBU;PAN LIAN-SHENG;TANIIKE SEIJI
分类号 C03B20/00;C03B8/04;C03C3/06;C03C15/00;C30B35/00 主分类号 C03B20/00
代理机构 代理人
主权项
地址