| 发明名称 |
Manufacturing method of a thin-film semiconductor device |
| 摘要 |
A method of forming thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.
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| 申请公布号 |
US7084020(B2) |
申请公布日期 |
2006.08.01 |
| 申请号 |
US20040004858 |
申请日期 |
2004.12.07 |
| 申请人 |
HITACHI, LTD. |
发明人 |
PARK SEONG-KEE;YAMAGUCHI SHINYA;HATANO MUTSUKO;SHIBA TAKEO |
| 分类号 |
H01L21/00;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L29/04;H01L29/786 |
主分类号 |
H01L21/00 |
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