发明名称 |
Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal |
摘要 |
A method of forming a substantially relaxed, high-quality SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is provided. The method includes first implanting ions into a Si-containing substrate to form an implanted-ion rich region in the Si-containing substrate. The implanted-ion rich region has a sufficient ion concentration such that during a subsequent anneal at high temperatures a barrier layer that is resistant to Ge diffusion is formed. Next, a Ge-containing layer is formed on a surface of the Si-containing substrate, and thereafter a heating step is performed at a temperature which permits formation of the barrier layer and interdiffusion of Ge thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer.
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申请公布号 |
US7084050(B2) |
申请公布日期 |
2006.08.01 |
申请号 |
US20050039602 |
申请日期 |
2005.01.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;DE SOUZA JOEL P.;FOGEL KEITH E.;SADANA DEVENDRA K.;SHAHIDI GHAVAM G. |
分类号 |
H01L21/20;H01L27/08;H01L21/02;H01L21/265;H01L21/31;H01L21/76;H01L21/762;H01L27/12 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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