MULTI-BIT NON-VOLATILE MEMORY DEVICE, AND METHOD OF OPERATING THE SAME
摘要
<p>A memory device may include a channel including at least one carbon nanotube. A source and a drain may be arranged at opposing ends of the channel and may contact different parts of the channel. A first storage node may be formed under the channel, and a second storage node may be formed on the channel. A first gate electrode may be formed under the first storage node and a second gate electrode may be formed on the second storage node.</p>
申请公布号
KR20060086235(A)
申请公布日期
2006.07.31
申请号
KR20050007240
申请日期
2005.01.26
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KANG, DONG HUN;HAN JEONG HEE;PARK, WAN JUN;KIM, WON JOO;HYUN, JAE WOONG