| 摘要 |
Disclosed is a backside-illuminated photodetector which enables to sufficiently reduce the package size and is capable to suppress scattering of light to be detected. Also disclosed is a method for manufacturing such a backside-illuminated photodetector. A backside-illuminated photodiode (1) comprises an N-type semiconductor substrate (10), a P+-type impurity semiconductor region (11), a recessed portion (12), and a window plate (13). The P+-type impurity semiconductor region (11) is formed in a surface layer on the front side (S1) of the N-type semiconductor substrate (10). The recessed portion (12), on which a light to be detected is incident, is formed in a region on the backside (S2) of the N-type semiconductor substrate (10) which region is opposite to the P+-type impurity semiconductor region (11). The window plate (13) is joined to a peripheral portion (14) surrounding the recessed portion (12). This window plate (13) covers the recessed portion (12) and seals the backside (S2) of the N-type semiconductor substrate (10). |
