| 摘要 |
The semiconductor device comprises an inter-layer insulating film 18 formed over a substrate 10 , a fuse 26 buried in the inter-layer insulating film 18, and a cover film 30 formed over the inter-layer insulating film 18 and having an opening formed therein down to the fuse 26. The inter-layer insulating film 18 is formed in contact with the side wall of the fuse 26 in the opening, whereby the fuse 26 is supported with the inter-layer insulating film 18 to thereby prevent the pattern collapse and pattern scatter. The wide scatter of the fuses can be prevented, and the fuses can be arranged in a small pitch. |
