发明名称 |
METHOD FOR FABRICATING METAL-INSULATOR-METAL CAPACITOR AND MIM CAPACITOR |
摘要 |
<p>In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern having a plurality of openings that respectively define areas where capacitor cells are to be formed; forming a lower electrode conductive layer on the insulating-layer pattern and on the semiconductor substrate; forming a first sacrificial layer that fills the openings on the lower electrode conductive layer; forming a second sacrificial layer on of the first sacrificial layer; planarizing the second sacrificial layer; exposing an upper surface of the lower electrode conductive layer; removing the exposed lower electrode conductive layer to form a plurality of lower electrodes that are separated from each other, each corresponding to a capacitor cell; and forming dielectric layers and upper electrodes, that are separated from each other, each corresponding to a capacitor cell, on each of the lower electrodes to provide a plurality of MIM capacitor cells constituting one capacitor to which the same electric signal is applied.</p> |
申请公布号 |
KR20060085844(A) |
申请公布日期 |
2006.07.28 |
申请号 |
KR20050006779 |
申请日期 |
2005.01.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, JUNG MIN;WON, SEOK JUN;SONG, MIN WOO;JEONG, YONG KUK;KIM, WEON HONG;KWON, DAE JIN |
分类号 |
H01L27/04;H01L21/31 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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