发明名称 Multi-layer memory arrays
摘要 Multi-layer memory arrays and methods are provided. A memory array has two or more layers of memory material, each layer of memory material having an array of memory cells. A first contact penetrates through each layer of memory material in a first plane and is electrically connected to each layer of memory material so as to electrically interconnect the layers of memory material in the first plane. A second contact penetrates through at least one of the layers of memory material in a second plane substantially perpendicular to the first plane.
申请公布号 US2006163614(A1) 申请公布日期 2006.07.27
申请号 US20060392343 申请日期 2006.03.29
申请人 MICRON TECHNOLOGY, INC. 发明人 PRALL KIRK D.
分类号 H01L27/10;G11C5/02;G11C11/16;G11C16/04 主分类号 H01L27/10
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