发明名称 |
Methods of forming a semiconductor device having a metal gate electrode and associated devices |
摘要 |
Methods of forming a semiconductor device having a metal gate electrode include sequentially forming a gate insulator, a gate polysilicon layer and a metal-gate layer on a semiconductor substrate. The metal-gate layer and the gate polysilicon layer are sequentially patterned to form a gate pattern comprising a stacked gate polysilicon pattern and a metal-gate pattern. An oxidation barrier layer is formed to cover at least a portion of a sidewall of the metal-gate pattern.
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申请公布号 |
US2006163677(A1) |
申请公布日期 |
2006.07.27 |
申请号 |
US20060386644 |
申请日期 |
2006.03.22 |
申请人 |
SAMSUNG ELECTRONIC CO., LTD. |
发明人 |
HEO SEONG-JUN;YOUN SUN-PIL;KIM SUNG-MAN;CHOI SI-YOUNG;CHOI GIL-HEYUN;KU JA-HUM;LEE CHANG-WON;LEE JONG-MYEONG;RYU KWON-SUN |
分类号 |
H01L21/336;H01L29/94;H01L21/28;H01L29/49;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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