ETCHING METHOD, PROGRAM, RECORDING, COMPUTER-READABLE RECORDING MEDIUM, AND PLASMA PROCESSOR

摘要

PROBLEM TO BE SOLVED: To control breakdown and deterioration of underlayer film on the occasion of etching a laminated insulating film, having a coated silicon-based insulating film. SOLUTION: A substrate W, on which an SOG film and a TEOS film are laminated on the underlayer film of a titanium nitride film, is accommodated within a processing chamber S and is supported on a susceptor 13. The processing chamber S is maintained in the evacuated atmosphere and the etching gas, that does not contain O2gas but C4F8gas and N2gas, is introduced into the processing chamber S from an upper electrode 30. High frequency is impressed on the susceptor 13 by a high-frequency power source, and the gas in the processing chamber S is converted to plasma. Consequently, the laminated film is etched on the substrate W. COPYRIGHT: (C)2006,JPO&NCIPI