| 摘要 |
Before applying a resist on a first gate insulating film, a thinner is provided on an entire surface including a surface of the first gate insulating film to wash the surface of the first gate insulating film. Specifically, while a semiconductor substrate is being rotated, onto a central part thereof the thinner is provided from a nozzle, so that the thinner is spread outward in a radial direction of the semiconductor substrate to be applied on an entire surface of the semiconductor substrate by a centrifugal force.
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