| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern which can form a micro and precise resist pattern even if a liquid-immersion exposure method is adopted. <P>SOLUTION: The method for forming a resist pattern includes an exposure step wherein a light is given to the specified position of a photo resist film formed on a substrate while a liquid is used as a medium, a post-exposure bake (PEB) step to heat the photo resist film after the exposure step, and a developing step to develop the photo resist film given by the light in the exposure step after the PEB step. In this case, a step is added after the exposure step and before the PEB step, so as to reduce or remove a liquid being still left at least at any position on the upper surface of the photo resist film, the side surface of the substrate and the rear surface thereof. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
