SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING IT

摘要

PROBLEM TO BE SOLVED: To provide a memory which reduces application voltage and prevents a deterioration in an insulating film. SOLUTION: When this semiconductor device is used as a memory and the like, a layer with the mixture of an inorganic compound having a charge transfer complex and an organic compound is used as the floating gate of the memory. Specifically, an element has a transistor structure which uses a layer 103 which is sandwiched between insulating layers 102a and 102b with the mixture of an inorganic compound and organic compound having the charge transfer complex as the floating gate. COPYRIGHT: (C)2006,JPO&NCIPI