| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device such as a solid-state imaging apparatus comprising pixels and CMOS logic circuits around the pixels, and to provide a manufacturing method thereof wherein a mask forming step by the photolithography and an implanting step of impurity ions can be eliminated. SOLUTION: The semiconductor device includes an imaging region formed with a sensor and pixel transistors; and a CMOS region formed with peripheral circuit transistors. The pixel transistors and the peripheral circuit transistors share a first conduction type semiconductor well region formed to surround the sensor. COPYRIGHT: (C)2006,JPO&NCIPI
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