| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a control method of a semiconductor storage device capable of preventing the destruction of already written data when writing new data in a multivalued NAND type flash memory. <P>SOLUTION: In the control method for the semiconductor storage device, a plurality of second logical blocks are set to a first logical block, and when data are written in the second logical block, an address next to an address of the second logical block at present is set as an expected value to wait for writing. In the case of protecting data of the second logical block finished in writing, the next address is skipped, and another address is set as an expected value. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
