| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of forming the film thickness of a metal silicide film formed in a source drain region to be thick without suffering from an increase of a junction leakage current even in the semiconductor device having a fully silicided gate electrode (full silicide gate electrode), and capable of forming the full silicide gate electrode and the metal silicide film in a one time silicide formation process. SOLUTION: The metal silicide film 11 is formed such that an upper principal surface is higher than a semiconductor substrate 1. The film thickness of the metal silicide film 11 can be formed to be thick, such that a distance between an interface A comprising the metal silicide film 11 and the semiconductor substrate 1 and an interface B comprising a source-drain diffusion layer 8 and the semiconductor substrate 1 can be secured satisfactorily. Consequently, it is possible to make the film thickness of the metal silicide layer 11 thick while avoiding the increase of the junction leakage current even when the full silicide gate electrode 10 is formed. COPYRIGHT: (C)2006,JPO&NCIPI
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