| 摘要 |
PROBLEM TO BE SOLVED: To exactly predict the life of a high dielectric constant semiconductor device. SOLUTION: A test method for MISFET for determining the effect of hot carrier injection in an integrated circuit lifetime is provided. In this method, positive load voltage is impressed to a gate having a high dielectric constant during maintaining a drain voltage at an equal value to the load voltage. The use of larger load voltage than a usual operation voltage accelerates failure and degradation of the integrated circuit. Electric parameters such as a threshold voltage, a transformer conductance, a linear drain current, a saturation drain current are observed. The shifts in the observed electric parameters show device failures. By plotting the logarithm of accelerated device life against the gate load voltage, data analysis is performed. The device life under the operating conditions are predicted by estimating on the basis of the plot concerning a specific device operation voltage. COPYRIGHT: (C)2006,JPO&NCIPI
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